FDC608PZ-F171 Description
This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and dc−dc conversions.
FDC608PZ-F171 Key Features
- 5.8 A, -20 V. RDS(ON) = 30 mW @ VGS = -4.5 V
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- SuperSOT TM -6 Package: Small Footprint (72% Smaller than
- These Devices are Pb-Free and Halide Free