FDC608PZ-F171 Datasheet | onsemi

ption This P- Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and dc- dc conversions. Features - - 5.8 A, - 20 V. RDS(ON) = 30 m W @ VGS = - 4.5 V RDS(ON) = 43 m W @ VGS = - 2.5 V - Low Gate Charge - High Performance Trench Technology for Extremely Low RDS(ON) - Super SOT TM - 6 Package: Small Footprint (72% Smaller than Standard SO- 8) Low Profile (1 mm Thick) - These Devices are Pb- Free and Halide Free ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDSS Drain- Gate Voltage - 20 VGSS Gate- Source Voltage ±12 Drain Current - Continuous (Note 1a) - 5.8 - Pulsed - 20 Maximum Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range - 55 to +150...