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FDC608PZ-F171 - P-Channel MOSFET

Download the FDC608PZ-F171 datasheet PDF. This datasheet also covers the FDC608PZ variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This P Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • 5.8 A,.
  • 20 V. RDS(ON) = 30 mW @ VGS =.
  • 4.5 V RDS(ON) = 43 mW @ VGS =.
  • 2.5 V.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SuperSOT TM.
  • 6 Package: Small Footprint (72% Smaller than Standard SO.
  • 8) Low Profile (1 mm Thick).
  • These Devices are Pb.
  • Free and Halide Free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDC608PZ-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDC608PZ N-Channel MOSFET Fairchild Semiconductor
FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor
FDC6020C Complementary PowerTrench MOSFET Fairchild Semiconductor
FDC602P P-Channel MOSFET Fairchild Semiconductor
FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDC608PZ P-Channel MOSFET
FDC604P P-Channel MOSFET
FDC606P P-Channel MOSFET
FDC610PZ P-Channel MOSFET
FDC6301N Dual N-Channel Digital FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com MOSFET – P-Channel, POWERTRENCH) 2.5 V Specified FDC608PZ, FDC608PZ-F171 D DS DG D TSOT−23−6 CASE 419BL Description This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and dc−dc conversions. Features • –5.8 A, –20 V. RDS(ON) = 30 mW @ VGS = –4.5 V RDS(ON) = 43 mW @ VGS = –2.